Temperature Study of Photoluminescence from Deep CdTe/Cd1-xMnxTe Quantum Wells
نویسندگان
چکیده
منابع مشابه
Investigation of temperature-dependent photoluminescence in multi-quantum wells
Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photol...
متن کاملLow Temperature Photoluminescence in Ultra-Thin Germanium Quantum Wells
We measured the photoluminescence (PL) spectra of a series of Gen quantum wells as a function of temperature, from 2K to 50K. The PL spectra at 2.1K are dominated by broad emission lines, which can be interpreted as recombination across the indirect gap of the Si/Ge microstructure and are strongly in uenced by the interface morphology of each sample. Beyond T & 15K, all samples show identical s...
متن کاملPhotoluminescence of tetrahedral quantum-dot quantum wells.
Taking into account the tetrahedral shape of a quantum-dot quantum well (QDQW) when describing excitonic states, phonon modes, and the exciton-phonon interaction in the structure, we obtain within a nonadiabatic approach a quantitative interpretation of the photoluminescence spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast...
متن کاملRoom-Temperature Time–Resolved Photoluminescence Studies of UV Emission from GaN/AlN Quantum Wells
Room temperature time-resolved photoluminescence (TRPL) studies of multiple quantum well (MQW) structures of the binaries GaN and AlN grown by molecular beam epitaxy are reported. The eventual application of these structures is for GaN intersubband IR light emitters. However, as an initial study, the structures are evaluated at UV to investigate materials parameters relevant to IR light emissio...
متن کاملPhotoluminescence microscopy of InGaN quantum wells
Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaN/InGaN heterojunctions. Room temperature photoluminescence of multiple InGaN quantum wells with GaN barriers fabricated by electron-cyclotron resonance assisted molecular beam epitaxy was measured as a function of position on a facet perpendicular to the layer structure. Our high r...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1995
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.87.500